Abstract
A comprehensive analysis of the Fourier transform infrared (FTIR) absorption and Raman scattering data on impurity modes is reported for the technologically important dilute ternary GaAs 1-x N x , and GaP 1-x N x (x x > 0.015), the formations of nonradiative complex microstructures involving N and/or intrinsic defects are energetically favourable. The impurity modes for such complex centres were predicted and the possibility of observing them by optical spectroscopy was evaluated.
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