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Abstract
Issues of HF-last cleaning of implanted silicon are studied. Contact angle measurement and ellipsometry are employed and the results are discussed based on SiO 2 and Si surface chemistry. The cleaning of BF 2-implanted wafers is not straightforward because of low etch rate of surface oxide and slow removal of surface hydroxyl groups. This problem is not significant in the case of As-implanted silicon, however the surface is found to oxidise faster than that of BF 2 or non-implanted silicon. Oxygen chemisorption starts at the silicon surface immediately after HF etching. Surface charge measurement can be a good alternative to contact angle measurement for the characterisation of silicon surface cleaning.
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