Abstract
GaInSb multiple quantum wells (MQW) grown on GaAs using an AlGaSb interface misfit (IMF) metamorphic buffer layer technique exhibit superior infrared photoluminescence (PL) at room temperature compared with MQW grown directly on GaSb. PL emission was obtained in the range from 1.7 μm (4 K) to 1.9 μm (300 K) from Ga1-xInxSb samples containing five compressively strained QW with In content x~0.3. Structural and optical characterisation confirms that the AlGaSb IMF growth technique is promising for the development of photonic devices operating at extended wavelengths based on GaAs substrates.
Highlights
Antimonide based quantum wells and nanostructures continue to attract considerable interest due to their potential for accessing technologically important applications in the spectral range beyond 1.5 μm
In the present work we report on the molecular beam epitaxy (MBE) growth of AlGaSb as a ternary interface misfit (IMF) metamorphic buffer layer on GaAs and study the properties of GaInSb quantum wells grown on this novel relaxed quasi substrate
The x-ray diffraction (XRD) spectrum of QJ410 with the ternary AlGaSb IMF metamorphic buffer structure shown in Figure 1(c) has no observable satellite peaks and a rather broad AlGaSb “quasi-substrate” broad band with a full width half maximum (FWHM) of 473 arcsecs
Summary
Antimonide based quantum wells and nanostructures continue to attract considerable interest due to their potential for accessing technologically important applications in the spectral range beyond 1.5 μm. The lack of semi-insulating GaSb substrates precludes the development of monolithic focal plane arrays and more complex devices, while the relatively high cost of GaSb wafers makes large volume applications cost-sensitive. It is worthwhile investigating alternative growth methods for GaInSb based device structures on inexpensive GaAs substrates, which are readily available as semi-insulating wafers and for which there exists a mature processing technology. In the present work we report on the MBE growth of AlGaSb as a ternary IMF metamorphic buffer layer on GaAs and study the properties of GaInSb quantum wells grown on this novel relaxed quasi substrate. AlGaSb conveniently provides substantial offsets in both the conduction and valence bands and results in improved photoluminescence efficiency from AlGaSb/InGaSb MQWs
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