Abstract
The composition and solar cell behaviour of CuInS 2/ZnSe junctions have been studied with XPS and electroreflectance (ER) techniques. Quite stoichiometric ZnSe thin films grow on CuInS 2 substrates by chemical bath deposition (CBD), even if using different concentration of Zn and Se precursors. This result contrasts with those of films grown on conducting SnO 2, which present a higher concentration of Zn not bonded to Se, mainly as Zn(O,OH) and metallic Zn 0. ER at different incidence angles (angle resolved electroreflectance, ARER) shows two signals from the CuInS 2 surface in contact with ZnSe. The signal with increasing intensity at lower incidence is assigned to an interfacial CuInS 2 phase with higher energy gap. A lower conversion efficiency was found on those cells where this signal is more intense. XPS results at the CuInS 2/ZnSe interface seem to indicate that such interfacial ARER signal is associated with an interfacial In excess.
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