Abstract
C–F polymer redeposition is generated on the etched sidewall of the patterned air‐bearing surface (ABS). This C–F polymer is a by‐product from fluorine‐based plasma using a Surface Technology Systems multiplex‐pro air‐bearing etch (ABE). The morphology of the re‐deposition and the composite element was observed by a scanning electron microscope (SEM). The chemical bonding results were characterised via X‐ray photoelectron spectroscopy, attenuated total reflected infrared spectroscopy and visible Raman spectroscopy. The purpose of this work is to demonstrate a modification of AlF3 re‐deposition to C–F polymer re‐deposition, which is easily stripped out by an isopropyl alcohol‐based solution. The benefit of this research is the removal of the re‐deposition in the resist strip process without additional cleaning process steps.
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