Abstract
Structural defects in SiC crystals were investigated and 4H-SiC pin devices were characterized by micro-Raman scattering and photoemission. With the experimental set-up presented, defects could be successfully detected in SiC crystals but stacking faults could not be detected with micro-Raman scattering, although they could be detected by photoemission. Residual stress could be evaluated in 4H-SiC devices, as well as the temperature increase associated with the devices powering. A good correlation was found between the characterization techniques used: micro-Raman scattering and photoemission.
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