Abstract
We report on molecular beam epitaxial growth and structural characterisations of unintentionally-doped InAs/AlSb strained multiple quantum wells grown on GaSb substrates. The crystalline quality and the interface roughness obtained using different cell shutter sequences at the arsenide/antimonide interfaces are compared by high resolution X-ray diffraction and small angle X-ray reflectivity measurements. Optical characterisations by photo-induced absorption spectroscopy are then carried out. A strong e1→e2 p-polarised intersubband absorption is observed in the mid infrared with a narrow broadening factor, revealing the good material quality of the samples.
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