Abstract
Boron diffusion is commonly associated with the formation of an undesirable boron rich layer (BRL), which is often made responsible for degradation of the carrier lifetime in the bulk. We therefore investigate the phenomenology of the BRL formation and its impact on sheet resistance and bulk lifetime. We use scanning electron microscopy (SEM) to investigate the thickness of the boron silicate glass (BSG) and the BRL. Additionally, we present sheet resistance measurements of diffused wafers and corresponding MWPCD lifetime mappings. We investigate these properties as a function of gas composition during deposition, BSG-deposition thickness and position on the diffused wafer. We find that a BRL layer of more than 10 nm thickness causes a degradation of the carrier lifetime in the bulk of the silicon wafer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
