Abstract
Metallic copper foil directly reacted with molten TCNQ (7,7,8,8,-tetracyano- p-quinodimethane) under nitrogen atmosphere resulted in a CuTCNQ semiconducting film with electrical switching and memory properties. The material was characterized by Raman and UV-Vis spectral analyses as well as current-voltage characteristic measurement. The degree of charge transfer from copper to TCNQ and the electrical memory switching property are discussed. The spectral analyses, degree of charge transfer and electrical property are compared with those of both metathetically synthesised pure CuTCNQ powder and a solution-grown film material.
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