Abstract
This chapter discusses magnetic resonance investigations on group III-nitrides. The chapter reviews the identification of intrinsic and extrinsic paramagnetic defects in aluminum gallium nitride (AlGaN) by electron spin resonance (ESR) and the related techniques, optically detected magnetic resonance (ODMR), and electrically detected magnetic resonance (EDMR). To determine the electronic parameters (binding energies and concentrations), the chemical identification of the defects and conclusive answers about the local surroundings are important. Electron spin resonance is one of the most efficient techniques to provide detailed information on the electronic and atomistic structure of paramagnetic defects in semiconductors. Shifting the Fermi level from the conduction band in an n -type sample by introducing compensating centers (as a result of co-doping or by the creation of defects by particle irradiation) changes the shallow effective-mass-type donors from the occupied (paramagnetic) to the unoccupied (nonparamagnetic) charge state.
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