Chapter 8 Luminescence from optical defects and impurities in CVD diamond

Abstract

Publisher Summary This chapter discusses the luminescence from optical defects and impurities in chemical vapor deposition diamond. The development of chemical vapor deposition (CVD) techniques enabling growth of thin films under low pressures and moderate temperatures has motivated interest in luminescence studies on such material. Relevant aspects include (i) a general characterization and quality control of CVD diamond, (ii) the question in how far defects known from natural or high-pressure high-temperature (HPHT) diamond also exist in CVD diamond, (iii) investigation of new defects unique to this material, and (iv) the ability to introduce shallow dopants and other impurities. Doping studies of CVD diamond—for example, with boron and phosphorus, have largely promoted identification of broadband luminescence or have shown the potential of CVD growth methods of n-type doping diamond, with the concomitant appearance of novel sharp-line excitonic spectra. In these cases, it is necessary to compare in detail CVD diamond data with those obtained from natural and high-pressure synthetic diamond including free and bound exciton recombination radiation.