Abstract
The origin of the Hall Effect and of the magnetoresistance is the deflection of charge carriers by a magnetic field producing the Hall angle between the current density and electric field vectors. Hall generators and field-plate devices employ these phenomena directly. They might be combined with other functions in the same semiconductor plate into an integrated circuit controlled by a magnetic field. The deflection of charge carriers by magnetic fields might also be used for the generation of a category of new semiconductor phenomena and devices. Hall generators with a metal-oxide-semiconductor (MOS) structure as well as diode-type Hall generators belong to the first category, while the magnetic barrier layer and the magneto-diode pertain to the second category. The semiconductors employed for Hall generator applications have the highest electron mobilities and the highest efficiencies. They are not well suited to the construction of p-n junction devices. Integrated circuits employing the Hall Effect cannot be fabricated from indium antimonide and indium arsenide.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
