Abstract
This chapter discusses the minority carrier transport in zinc oxide (ZnO) and related materials. Transport properties of minority carriers in ZnO and related compounds are of critical importance for the functionality of bipolar devices. The chapter summarizes the available information on the subject of minority carrier transport in ZnO-based semiconductors, focusing on its temperature dependence and the dynamics of non-equilibrium carrier recombination. The influence of deep traps on minority carrier diffusion length and lifetime is discussed. A brief summary of the role of minority carrier transport in the performance of bipolar photovoltaic devices, as well as a discussion of techniques used for measurements of the minority carrier diffusion length and lifetime are also provided in the chapter. Issues affecting minority carrier transport in ZnO are discussed, with special attention given to the temperature dependence of minority carrier diffusion length and lifetime, as well as to the recombination dynamics of non-equilibrium minority carriers.
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