Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques

Abstract

Publisher Summary This chapter discusses high-pressure study of DX centers using capacitance techniques. Pressure can change the band structure of a semiconductor without changing its symmetry or composition. Thus, pressure is a powerful technique for studying the influence of electronic band structures on the properties of defects in semiconductors. Defect centers in semiconductors are usually classified as shallow (or hydrogenic) and deep. A defect energy level whose wave function can be constructed out of the near-band extremum is considered shallow. On the other hand, the wave function of a highly localized center can be expressed only as a linear combination of wave functions from a large region of the Brillouin zone. The properties of shallow and deep centers are quite different—for example, their pressure dependence. The chapter describes the way of performing capacitance measurements on samples subjected to high pressure inside the diamond anvil cell (DAC).