Abstract
This chapter presents experimental studies on carrier dynamics in self-assembled indium gallium arsenide/gallium arsenide (InGaAs/GaAs) quantum dots grown by the alternate supply (ALS) process and discusses their influence on lasing performance. The chapter analyzes electroluminescence and time-resolved photoluminescence data to provide recombination and relaxation lifetimes along with the carrier-relaxation processes into quantum dots. The dot's high crystal quality, which features narrow spectrum broadening and high-emission efficiency, enable to pursue the problem. Electroluminescence and time-resolved photoluminescence data are analyzed in the chapter to provide recombination and relaxation lifetimes as a function of temperature. The carrier-relaxation process into quantum dots comprises two processes: (1) the carrier relaxation from continuous energy levels into quantum-dot discrete levels and (2) the relaxation between the discrete levels inside dots. The random initial occupation (RIO) model in the analysis explains the double-exponential decay of excited levels, and electroluminescence and photoluminescence spectra that are simulated using the obtained lifetimes.
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