Abstract
Recent studies on a semiconductor laser revealed that a semiconductor laser generates a number-phase squeezed state rather than a squeezed state due to the fact that a semiconductor laser is pumped by a shot-noise-free electric current. If such a squeezed state becomes phase coherent with an independent local laser oscillator, the squeezed light can be detected by optical homodyne detectors and used for various interferometric measurements. A phase-coherent squeezed state or squeezed vacuum state can be generated by injection locking the squeezed slave laser with an external master laser. This chapter reviews the theoretical and experimental aspects of squeezing of such an injection-locked semiconductor laser. Spontaneous emission of an atom also has been studied for many years, both theoretically and experimentally. Spontaneous emission is not an immutable property of an atom but a consequence of atom-vacuum field coupling. The decay rate, energy, and radiation pattern of spontaneous emission can be altered by a cavity wall. Because spontaneous emission is a major source of energy loss, speed limitation, and noise of a semiconductor laser, such capability of control of spontaneous emission is expected to improve the performance of a semiconductor laser. This chapter also reviews the theoretical and experimental aspects of control of spontaneous emission in various semiconductor microcavities.
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