Abstract
This chapter reviews aspects of electroreflectance (ER) and electroabsorption (EA) studies in hydrogenated tetrahedrally bonded amorphous semiconductors. A historical background of modulation spectroscopy and its availability to amorphous material characterizations are discussed, together with its difficulties and usefulness. Recent results on electroreflectance investigations of a-Si:H, a-SiC:H, and μ c-Si are introduced. New topics on back-surface-reflected electroabsorption and its efficient application to a-Si device physics are also described. Finally, the knowledge obtained is summarized, and some other possibilities for this technique as a tool for exploring the vast field of amorphous materials science are forecast. It is concluded that clear signals of electric-field-modulated reflectance and absorption can be observed in hydrogen-passivated, tetrahedrally bonded amorphous semiconductors such as a-Si:H, a-SiC:H, and μ c-Si. The line shape and structure of the modulated signals are clearer in the better quality samples. This means that a measurement of ER and EA becomes a good measure of film quality. It is suggested that the line shape and structure of the modulated signals are clearer in the better quality samples. This means that a measurement of ER and EA becomes a good measure of film quality.
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