Abstract
This chapter discusses the hydrogenated amorphous GaAs thin films. Two types of hydrogenated a-GaAs films is prepared by thermal and flash evaporation with a modified arrangements that give near stoichiometric composition as inferred by XPS. The hydrogenation was performed in situ through H-plasma enhanced by DC or AC voltages. The IR spectra of the a-GaAs: H showed all the expected absorption modes. The optical hand gap of both thermally and flash evaporated films is found to be varied with hydrogen content in an opposite trend to variation of Urbach tail. The direct current conductivity of both types of the films was observed to vary with annealing temperature up to about 473 K and then becomes constant. This behavior is also true for the activation energy of conduction. In conclusion it is shown that thermal and flash evaporation technique could be used to prepare a-GaAs:H with the required properties to be used in photovoltaic use in solar cells.
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