Abstract
This chapter focuses on quantum well infrared photodetectors (QWIPs) that utilizes the photoexcitation of an electron (hole) between the ground state and the first excited state in the conduction (valence) band quantum well. The quantum well structure is designed as the photoexcited carriers escape from the quantum well and is collected as photocurrent. Larger intersubband oscillator strength and detectors afford greater flexibility than extrinsically doped semiconductor infrared detectors because the wavelength of the peak response and cutoff is continuously tailored by varying layer thickness. Various types of gallium arsenide–aluminium gallium arsenide (GaAs–AlGaAs)-based QWIPs, QWIPs with other materials systems, the figures of merit, light-coupling methods, QWIP imaging arrays, and some applications of QWIP FPAs are also reviewed in the chapter. Rapid progress is made in the understanding of intersubband absorption and carrier transport in the QWIP device structure and practical demonstration of large, sensitive, and two-dimensional QWIP imaging focal plane arrays (FPAs).
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