Abstract
This chapter describes the use of hydrogenated amorphous silicon (a-Si:H) as a photoreceptor for transferring an image by electrophotography. It introduces processing in electrophotography and discusses some advantages expected from the a-Si:H photoreceptor in comparison with other competitive materials. To satisfy the requirements of a charge depletion device during image processing, attempts have been made at designing both the device structural and the material for this purpose. Consequently, an acceptable field of 40–50 μm –1 has been obtained in a-Si:H photoreceptor. The chapter discusses photoinduced discharge (PID) within the framework of evaluating the photoresponse of a-Si:H photoreceptor. The surface of a-Si:H has significant influence, either on the photoresponse or on the image quality. A typical device structure is proposed for practical use. The chapter also discusses some problems of a-Si:H photoreceptor from the manufacturing point of view.
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