Abstract
This chapter provides an overview of the interface reliability that has become a primary focus of advanced semiconductor development as dielectric materials transition from oxides and nitrides to polymers and carbides. Packaging reliability, transistor performance, resistive–capacitative (RC) delay, electromigration, and stress migration resistance have dependencies on interface properties. Process and environmentally induced damage are shown to be critical contributors to the properties of interfaces formed between dielectrics and metals, semiconductors, and other dielectrics. Adhesion promoters, plasma pre-cleans, wet pre-cleans, queue times, design rule changes, low down force polishing, and resist stripping changes have been employed to improve the compatibility of emerging dielectrics with other materials and with processes, performance and reliability requirements.
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