Abstract

Publisher Summary This chapter focuses on the applications of light-emitting diodes (LEDs) and laser diodes (LDs). Much research has been done on high-brightness blue LEDs and LDs for use in full-color displays, full-color indicators, and light sources for lamps, with the characteristics of high efficiency, high reliability, and high speed. Gallium nitride (GaN) and related materials—such as AlGaInN—are III–V nitride semiconductors with the wurtzite crystal structure and a direct energy band structure, which is suitable for light emitting devices. The bandgap energy of AlGaInN varies between 6.2 and 1.95 eV depending on its composition at room temperature. The focus of III-V nitride research is the realization of a current-injected laser diode, which can be operated under a continuous-wave (CW) at room temperature. The laser emissions seem to be a result of the subband transition of quantum energy levels caused by three-dimensional quantum confinement of electrons and holes localized at certain potential minima.

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