Abstract
This chapter addresses the present status of Gallium Arsenide (GaAs) as a radiation detector. Some discussion of the material characteristics are provided with ample references for further information. GaAs has shown promise as a room temperature operated radiation detector and spectrometer. Schottky barrier detectors fabricated from liquid phase epitaxy (LPE) GaAs have demonstrated good energy resolution for low energy gamma rays and x-rays indicating that GaAs in pure form is a viable candidate for room temperature gamma ray spectroscopy. Epitaxial detectors are restricted to thin films generally no thicker than 200 μm; therefore, their application is restricted to low energy gamma rays. Thicker spectrometers fabricated from bulk GaAs have shown good energy resolution at room temperature for charged particles. However, gamma ray resolution suffers due to short carrier lifetimes and poor charge carrier extraction from the devices.
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