Abstract
Publisher Summary This chapter presents a discussion on the fundamentals of epitaxial growth and atomic layer epitaxy. GaAs high-speed or microwave devices, such as Gunn or impact-avalanche transit-time (IMPATT) diodes and field effect transistors (FETs), have been developed using epitaxial wafers. It describes four epitaxial methods—namely, liquid-phase epitaxy (LPE), halogen transport vapor-phase epitaxy (VPE), metalorganic chemical vapor deposition (MOCVD), and molecular-beam epitaxy (MBE)—that are most widely used in the fields of research and development, and also in production plants. The terms LPE, VPE, MOCVD, and MBE are used because they are the most popular. Their definitions for GaAs growth are as follows: LPE is growth from arsenic-saturated liquid gallium. VPE is growth from gas mixture of gallium chloride (GaCl) and arsenic gas. MOCVD is growth from organic gallium gas, such as trimethyl gallium (TMG) or triethyl gallium (TEG) and arsine. MBE is growth from neutral gallium and arsenic molecular beams in vacuum. A comparative study of these four epitaxial methods is presented in the chapter with kinetical and thermodynamical calculations.
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