Abstract

In this paper, we have studied, designed and realized a single-transistor chaotic generator with a smooth power spectrum of about −35 dBm in frequency bandwidth up to 1 GHz. The chaos generator model is described by a continuous-time six-dimensional autonomous system assuming an exponential nonlinearity. Chaotic behavior is characterized by bifurcation diagrams, Lyapunov exponents, phase portraits of the attractors and spectra of the oscillations, using both numerical and circuit simulations. Advanced Design System (ADS)-based simulations were carried out to support the theoretical analysis, and to validate the mathematical model. The simulations are carried out using real transistor parameters and taking into account the properties of the substrate, the influence of the board topology and the characteristics of the layout material. This simulation method known as EM/Circuit Co-Simulation allows the simulation results to approach as closely as possible to those of the experiments. In the light of the positive simulation results, the proposed structure is realized to demonstrate its feasibility, and to confirm the numerical results. The prototype is manufactured and mounted on a breadboard using the surface-mount devices and BFP193 bipolar junction transistor. After realizing the generator, we pushed it further towards perfection, through the proposal and realization of a broadband amplifier, in order to gain more bandwidth to improve the spectral characteristic of the generator, which makes it promising for many communication applications such as spread spectrum communication, direct chaotic communication, etc.

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