Abstract
The formation of As clusters in Si has been studied by measuring the As lattice site location, using helium ion channeling on high dose As implanted Si. The annealing process involves using pulsed laser irradiation to super‐saturate the Si with As, followed by furnace annealing for cluster formation. Displacements of As from the lattice site by ∠0.15 A have been observed in the thermally‐annealed samples. This displacement is direct evidence of the formation of As clusters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
