Abstract
(001) silicon wafers were implanted in random conditions with 8 × 10 13 cm −2, 60 keV silicon ions. The samples were given a tilt angle of 8° from the [001] direction to avoid axial channeling and rotation angles of 0°, 20°, 70° and 90° to evidence (110) planar channeling effects, the 0°, 90° conditions denoting parallelism between (110) planes and the ion beam direction. An unforeseen more marked ion channeling was detected by double-crystal X-ray diffraction for the 70° rotated wafer compared with the ones observed for the 0° and 90° cases. Considering the errors in the sample alignment procedure and the deviations of wafer reference flats from 〈110〉 directions, the experimental results could be explained with the simple concept of crystal transparency to the ion beam for the incidence conditions used.
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