Channeling of Relativistic Electrons in Half-Wave Silicon Crystal and Corresponding Radiation

Y Takabayashi,V G Bagrov,Yu L Pivovarov,T A Tukhfatullin,O V Bogdanov

doi:10.1088/1742-6596/635/6/062007

Abstract

SynopsisThe new experiments on channeling of 255 MeV in a 0.7 μm silicon half-wavelength crystal were performed at SAGA LS facility. Both experimental and simulated electron angular distribution after the crystal and corresponding radiation spectra reveal the number of peculiarities.

Highlights

Where dp is the distance between channeling planes, θc is the critical channeling angle, U0 is the maximal value of potential energy of the particle in the field of continuous potential for planar channeling, E is the energy of the particle
The new experiments on channeling of 255 MeV in a 0.7 μm silicon HWC were performed at SAGA LS facility
We present the results of the new experiments and comparison with computer simulation

Summary

Introduction

С where dp is the distance between channeling planes, θc is the critical channeling angle, U0 is the maximal value of potential energy of the particle in the field of continuous potential for planar channeling, E is the energy of the particle. Where dp is the distance between channeling planes, θc is the critical channeling angle, U0 is the maximal value of potential energy of the particle in the field of continuous potential for planar channeling, E is the energy of the particle.

Results

Conclusion