Channeling effect measurements of arsenic implants in silicon

Abstract

Abstract Channeling effect measurements using MeV He ions were used in the study of 80 keV, R.T. arsenic implants in silicon. The implantation disorder and the atom location of arsenic atoms were studied as a function of sequential anneals in the temperature range 600-900°C for the doses 0.7, 1.5 and 4 × 1014cm−2. Values for the amorphization dose, average damage depth and spread of damage depth are reported and discussed. From the atom location measurements, it appears that no appreciable arsenic fraction is present at regular tetrahedral interstitial sites in the silicon lattice, following different isochronal (30 minutes) annealing steps at temperatures ranging from 600° to 900°C. The arsenic substitutional fraction was determined and the data correlated with conductivity and Hall effect measurements previously performed for the implantation dose of 0.7 × 1014 ions - cm−2. The results of the analysis seem consistent with a model for the physical process responsible for the electrical activation of impl...