Abstract
We have performed a controlled study of the effect of a 7 ° fixed tilt angle with a variable twist orientation on the sheet resistance uniformity of 〈111〉 crystal orientation, 100 mm silicon substrates with no screen oxide. The four-point probe sheet resistance uniformity behavior is characterized for boron, arsenic and phosphorus implants performed using 50 keV energy to a 7 × 10 13 cm −2 dose activated by a furnace anneal. The periodic variation of the uniformity with twist angle, predicted by crystallographic considerations, is clearly revealed; the optimum twist orientation for a 7 ° tilt angle is identified for all three species.
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