Abstract
The new technique is demonstrated for the imaging of semiconductor structures. The technique involves the use of a channeled 4He+ microbeam, scanned across the surface to provide a channeling-contrast image of subsurface lattice disorder and atom location. The present arrangement provides a lateral resolution of ∼5 μm and an in-depth resolution of ∼30 Å. The technique is applied to the imaging of small, laser annealed regions on ion implanted silicon wafers.
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