Channeled ion implantation of as+ in silicon at 300°c

Abstract

Abstract Spatial distribution and lattice location of implanted As atoms in and Si as well as spatial distribution of radiation defects were studied by the RBS techniques after channeled implantation of 30 keV As+ ions with a dose of 3 × 1015 cnr2 at 300°C. The profile of As atoms was observed to have two maxima due to superposition of the profiles of initially nonchanneled and dechanneled ions. The aligned As+ ion beam generates fewer defects than the random one. The radiation defect profiles both after channeled and random implantations at 300°C are of the well pronounced bimodal type with a minimum at the depth of the maximum of elastic energy losses of nonchanneled As+ ions. A model of the layer of disordered zones with vacancy-defect nuclei and interstitial-defect shells is proposed. Annealing by a ruby laser with a pulse energy density of 1 J/ cm2 and duration 40 ns results in removal of the radiation defects and flattening of the substitutional As atom profile.