Channel width dependence of hot-carrier induced degradation in shallow trench isolated PMOSFETs

K Ishimaru,Chenming Hu Chenming Hu,J.F Chen

doi:10.1109/16.772507

Channel width dependence of hot-carrier induced degradation in shallow trench isolated PMOSFETs

K Ishimaru, Chenming Hu Chenming Hu + Show 1 more

https://doi.org/10.1109/16.772507

Copy DOI

Journal: IEEE Transactions on Electron Devices	Publication Date: Jul 1, 1999
Citations: 23

Affiliation: Toshiba (Japan), University of California, Berkeley, Taiwan Semiconductor Manufacturing Company (Taiwan)

#Shallow Trench Isolation #Shallow Trench Isolation Structure + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

Channel width dependence of the hot-carrier induced degradation in pMOSFETs with a shallow trench isolation structure is investigated. Enhanced degradation is observed in a narrow channel width device. The narrow width device shows large electron trapping efficiency of the gate oxide film though the gate current is smaller than the wide width device. The mechanical stress caused by shallow trench isolation may be responsible for this phenomenon.

Full Text