Abstract
Electrical characteristics of junctionless transistors (JLTs) with varying Si thickness (tsi), were discussed in detail with consideration to maximum depletion width (Dmax), threshold voltage (Vth) and mobility degradation caused by a transverse electric-field. The tsi significantly influences both partially depleted operation and bulk conduction, accompanied by noticeable variation in Vth and mobility degradation. Our studies provide important information for a better understanding of the operation mechanism of two-dimensional material based transistors without junctions as well as JLTs.
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