Channel Scaling Behavior of Amorphous In-Zn-O Thin Film Transistors with High Mobility over 35 cm2/Vsec

Abstract

We report on the channel scaling behavior of amorphous In-Zn-O (a-IZO) thin film transistor (TFT) devices. The TFTs were fabricated at room temperature where a-IZO channel and Mo metallization were deposited using dc magnetron sputtering. Both channel length (L) and width (W) of the devices were scaled down in order to maintain the aspect ratio, W/L of 20. The channel scaling of a-IZO TFTs leads to an increase in on-state drain current. However, a decrease in field effect mobility and an increase in threshold voltage and off-state current are also observed with decreasing channel length, known as short channel effects which are mainly attributed to an increase in the longitudinal electric field applied to channel IZO.