Abstract
A novel channel mobility model with two-dimensional (2D) aspect is presented covering the effects of source/drain voltage (VDS) and gate voltage (VGS), and incorporating the drift and diffusion current on the surface channel at the nano-node level, at the 28-nm node. The effect of the diffusion current is satisfactory to describe the behavior of the drive current in nano-node MOSFETs under the operations of two-dimensional electrical fields. This breakthrough in the model’s establishment opens up the integrity of long-and-short channel devices. By introducing the variables VDS and VGS, the mixed drift and diffusion current model effectively and meaningfully demonstrates the drive current of MOSFETs under the operation of horizontal, vertical, or 2D electrical fields. When comparing the simulated and experimental consequences, the electrical performance is impressive. The error between the simulation and experiment is less than 0.3%, better than the empirical adjustment required to issue a set of drive current models.
Highlights
Decreases, the saturation current of metal-oxide-semiconductor field-effect transistors (MOSFETs) increases with the increase in the drain voltage or decrease in the channel length, which is known as channel length modulation [3–5] or velocity overshoot [6–9]
The device models in semiconductor foundries usually assist in making an empirical adjustment to compensate for this drawback, but have no physical meaning
Ver, by consolidating the adjustment of VDS and Lmask correlated to the horizontal electric field and VGS influencing the vertical electric field, the drive current of MOSFETs can be more meaningful and beneficial in providing a set of accurate nano-node device models, especially beyond 28-nm node fabrication or entering 3-nm node processes [13–16]
Summary
Due to this simple assumption, the pseudo-ideal device models can and quickly be assigned to the design houses. A new concept incorporating the diffusion effect at each channel point was proposed due to the gradient of inversion charge density, especially near the pinch-off point [10] At this pinch-off point, the inversion charge density approaches zero, indicating zero drift current, but the real drive current is not zero.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
