Abstract
Quantum dots can be formed in simple GaN/AlGaN FETs by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe a decrease in the number of formed quantum dots with a decrease in the FET channel length. A few quantum dots are formed in the case with a gate length of 0.05 μm and we evaluate the dot parameters and the disordered potential. We also investigate the effects of a thermal cycle and illumination of light and reveal the change of the disordered potential.
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