Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs

Abstract

The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long channel devices, interface degradation by hot carriers mainly degrades the device at the maximum impact ionization condition (VG ~ VD/2). At higher VG closer to VD, cold and hot carrier injection to the oxide bulk defect increases and dominates at the VG=VD stress condition. On the other hand, in short channel devices, hot carriers are generated continuously with respect to VG and highly at VG=VD, and this hot carrier injection into the oxide bulk defect is the main degradation mechanism.