Abstract
The electron beam (EB) irradiation process has been investigated to control the channel dopant profile of 0.2 /spl mu/m surface channel pMOSFETs for the first time. The results show that the channel dopants are redistributed along the EB-induced point defects by subsequent annealing when the EB is used to directly irradiate the pMOSFETs. As compared to the control process, EB treatment not only increases drive current by 14% but also reduces junction capacitance by 20% in pMOSFETs, despite the fact that EB treatment causes a reverse short channel effect. No degradation of the gate oxide reliability was identified for the EB treated sample.
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