Abstract
Implantation of 150-keV oxygen into silicon to a dose of 2×1018 cm−2 at 600 °C resulted in a silicon-on-insulator structure. Annealing was carried out at 1150, 1200, and 1250 °C. The top silicon layer was removed, and metal contacts were evaporated to form capacitors for C-V and C-t measurements. The values of all the electrical parameters measured changed with annealing temperature. Oxide charge and doping density in the underlying silicon decrease with increasing annealing temperature. The capacitance relaxation time after pulsing into deep depletion, and the carrier generation lifetime increase with increasing annealing temperature. Low values of doping density and high values of capacitance relaxation time are desirable for supporting high voltages across such a structure.
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