Abstract
It was demonstrated that the presence of large amounts (≥2.8 at.%) of non-bonded hydrogens (NBHs) in hydrogenated amorphous silicon (a-Si:H) resulted in changes in the vacancy size distribution, where the vacancy size distribution was determined using positron annihilation lifetime spectroscopy. NBHs in small vacancies induced large nanovoids (>~1nm), via the relaxation of internal stresses in the a-Si network, without decreasing the atomic number density of the silicon.
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