Abstract
The influence of high-temperature annealings followed by cooling under different conditions on changes in the specific resistance and photoconductivity relaxation time in silicon and on the formation of the acceptor state of gold, when gold diffused from a layer vacuum-deposited on the surface, was studied in experiments including sequences of processes conducted using various temperatures, cooling conditions, and surface states. The experimental data are analyzed based on the concept of changes in the state of impurities present in silicon and in the corresponding dynamic and static force fields.
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