Changes in the spectrum of surface states of Si−SiO2 structures stimulated by a weak magnetic field

Abstract

Weak-signal methods are used to study long-term changes in the spectrum of surface states (STs) of n-Si−SiO2 systems after exposure to a steady magnetic field of 105 A/m. The spectrum changes appreciably within the first 3–5 days after magnetic treatment. The initial spectrum is then slowly partially reestablished. The following defects play an important role in the restructuring of the ST spectrum: singly negatively charged double vacancy: vacancy+phosphorus. In the event of long-term changes in ST density the lifetime of the minority carriers in the space-charge region has three stages differing in the character of the changes in the properties of the magnetically treated structures. It is established that the latter changes depend on intrinsic defects in the semiconductor. It is also found that complex changes take place in the recombination properties of Si−SiO2 structures after magnetic treatment.