Changes in the silicon microhardness induced by a low-intensity electron beam

Abstract

It is shown that nonequilibrium point defects are of primary importance in the changes in the silicon microhardness induced by a low-intensity (I ∼ 105 cm−2 s−1) electron beam. It is found that the necessary condition for softening under low-intensity electron irradiation is the presence of an oxide layer on the surface. The thickness of the surface layer in which anomalous changes in the microhardness are observed is determined by the layer-by-layer etching technique.