Abstract
A qualitative difference was observed in the behavior of photoacoustic signals when germanium and silicon were melted by laser pulses of 20 nsec duration and 1.06 µ wavelength. After increase of the reflectivity a photoacoutic pressure pulse in germanium exhibited a strong dip, whereas in the case of silicon there was no such transformation of the photoacoustic signal.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
