Abstract
The changes in the electrical conductivity occurring in chalcogenide amorphous semiconductors, from the system GeSeTe, have been studied. This study includes the determination of I-V characteristics, the electrical conductivity and its relationship with temperature, and, finally, the ageing of samples started by annealing and by thermal switching due to Joule self-heating. To complete the analysis, the possible structural modifications which could have been produced during the experiments have been verified by means of X-ray diffraction.
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