Abstract
The changes in dominant recombination mechanisms of Cu(In,Ga)Se2 thin films grown from (In,Ga)2Se3 precursors are investigated using energy- and time-resolved photoluminescence. The results are analyzed with a rate-equation analysis and correlated with n/p diode measurements on processed devices. The experimental results quantify a change in the dominant radiative process and an improvement in the underlying material quality. These observations support a growth model incorporating changes in the dominant defect states and recombination mechanisms during this final stage of the growth process. Additionally, evidence is presented that supports the passivation of near-surface recombination sites by CdS.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
