Abstract
Amorphous films, containing 100, 50, and 30% La, were deposited by atomic layer deposition (ALD) on ultrathin films . Changes in the depth profile, as a function of composition, and structure were examined by medium energy ion scattering and transmission electron microscopy. The electronic structure of the films was investigated by X-ray photoelectron spectroscopy as a function of La concentration and postdeposition annealing temperature. In the case of a pure film without , the at the interfacial layer had been converted to and La silicate during the ALD process. However, in case of a film with , interfacial reactions were significantly suppressed. In particular, silicate formation in the films gradually increased with the increasing annealing temperature, while that in films incorporated was suppressed up to an annealing temperature of .
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