Changes in Concentrations of Copper and Nickel on Boron-Doped Czochralski-Grown Silicon Surface at Room Temperature

Abstract

In the diffusion of metal impurities in single-crystal silicon (c-Si), it is well known that Cu and Ni atoms diffuse very quickly within the crystal matrix. From various studies on diffusivity in bulk Si, it is clear that such elements can easily move through the Si matrix. In this paper, the time-dependent change in the concentrations of Cu and Ni metals on the Si surface at room temperature is reported. In this study, this change is evaluated by wet chemical analysis, and it is shown that this change results from the high diffusivity of Cu and Ni in Si at room temperature. Furthermore, it is shown that the Ni atoms move independently of the B concentration in Si, and it is possible to predict the diffusion behavior of Cu and Ni in p-type Si at room temperature on the basis of using the conventional thermal diffusion theory.