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Abstract
The structure of sputtered tantalum films deposited by d.c. biased d.c. diode sputtering has been studied. β tantalum is observed under equilibrium deposition conditions, when consistent and reproducible results are obtained. The structure of the films sputtered during the period of stabilizing deposition develops from the b.c.c. phase to the β phase through mixtures of the two. Based on the assumption that β tantalum is impurity stabilised, it is concluded that the source of impurities in our system is the thick film of tantalum grown on the discharge electrodes, collector and anode.
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